The atomic layer deposition technique, originally called atomic layer epitaxy, was proposed by Tuomo Suntola (Finland) in 1977. This technique has much in common with chemical vapour deposition, the only difference being that atomic layer deposition involves chemical reactions where precursors react with the surface sequentially (repeatedly) and do not interact with each other directly (do not contact). Precursors are separated by way of nitrogen or argon purging. While the process involves self-limited reactions, the total thickness of deposited layers depends on the number of cycles rather than the length of the reaction, and the thickness of each individual layer can be controlled with very high precision.

Atomic layer deposition is used with several types of films, including films of different oxides (Al₂O₃, TiO₂, SnO₂, ZnO, HfO₂), nitrides (TiN, TaN, WN, NbN), metals (Ru, Ir, Pt) and sulphides (e.g., ZnS). Unfortunately, we still lack cheap technologies for growing such technologically vital materials as Si, Ge, Si₃N₄ and some multicomponent oxides.