There are two systems of electron-beam lithography – scanning lithography and projection lithography.

In scanning electron beam lithography the resist is exposed (scanned) by a focused beam of electrons consistently moving in the plane of the pattern. The electron beam is controlled by a computer in accordance with a predefined program, therefore there is no need for templates or masks. However such sequential scanning of the image increases the exposure time.

In projection electron beam lithography a wide unfocused flow of electrons is used to obtain the entire image through one exposure. In this system, the photocathode is located on the surface of the optical mask with a given pattern. Ultraviolet rays irradiate the photocathode layer through a mask, which causes emission of electrons from the photocathode in the irradiated areas of the image. These electrons are projected onto the surface of the resist using homogeneous electrostatic and magnetic fields. As a result, the image is created on the entire area of the substrate through one exposure.