ion implantation (rus. ионная имплантация otherwise ионное внедрение; ионное легирование) — impacting of extrinsic atoms into a solid by bombarding its surface with accelerated ions.

Description

Penetration of ions into the bombarded object (target) occurs during ion bombardment of solids along with the surface sputtering process, ion-ion emission, formation of radiation defects, etc. The most common application of ion implantation is the doping of semiconductors for the production of p-n junctions, heterojunctions, low-resistance contacts. Ion implantation into metals is used in order to increase their hardness, durability, corrosion resistance, etc. Ion bombardment of high-temperature superconductors belonging to the RBa2Cu3Ox family can be used to create highly effective pinning centres and significantly increase the critical current density.

Illustrations

Modified surface layer.
Modified surface layer.

Author

  • Naymushina Daria A.

Source

  1. Ion implantation // Physical encyclopedia (in Russian). V. 2 / Ed. by A.M. Prokhorov. — Moscow: Sovetskaja ehnciklopedija, 1990. 197–199 pp.

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