(rus. ионная имплантация otherwise ионное внедрение; ионное легирование
— impacting of extrinsic atoms into a solid by bombarding its surface with accelerated ions.
Penetration of ions into the bombarded object (target) occurs during ion bombardment of solids along with the surface sputtering process, ion-ion emission, formation of radiation defects, etc. The most common application of ion implantation is the doping of semiconductors
for the production of p-n junctions, heterojunctions, low-resistance contacts. Ion implantation into metals is used in order to increase their hardness, durability, corrosion resistance, etc. Ion bombardment of high-temperature superconductors
belonging to the RBa2
family can be used to create highly effective pinning centres
and significantly increase the critical current density.
- Ion implantation // Physical encyclopedia (in Russian). V. 2 / Ed. by A.M. Prokhorov. — Moscow: Sovetskaja ehnciklopedija, 1990. 197–199 pp.