metalorganic vapour phase epitaxy
(rus. эпитаксия, газофазная
— 1) a variation of epitaxy as one of nanotechnological methods to fabricate semiconductor heterostructures; 2) a variation of a chemical vapour deposition where epitaxial films are produced.
Vapour phase epitaxial growth of monocrystalline layers of semiconductor materials on a substrate
is done based on organometallic compounds in the reactor at under-pressure conditions. Vapour phase epitaxy was originally developed for growing silicon and gallium arsenide, and now it is used to grow most of the semiconductor
materials used in micro- and optoelectronics. Mixed vapour enters the reactor where the substrates (thin slices of a monocrystal) are placed. In the case of silicon growing, the core component in the mixed vapour is silicon tetrachloride SiCl4
or silane SiH4
; when growing arsenide and phosphidem, the main components are the respective metal alkyls (Ga(CH3
), as well as arsine AsH3
and phosphine PH3
. The vapour mixture at high temperature decomposes in a pyrolytic way near the growth surface
and the third group elements interact with the fifth group elements to form AIII
compounds. This results in the layer-by-layer deposition of semiconductor compounds. Vapour epitaxy is used to grow GaAlAs/GaAs heterostructures with quantum wells
for injection lasers
, GaAs/GaAlAs heterostructures with selective doping, heterostructures with quantum dots
, wide-band GaN-based semiconductor materials to manufacture blue and green LEDs
and short-wavelength lasers.
Vapor phase epitaxy unit reactor design.
- Gusev A. I. Nanomaterials, Nanostructures, and Nanotechnologies (in Russian) // Fizmatlit, Moscow (2007) - 416 pp.