chemical vapour deposition abbr., CVD (rus. химическое осаждение из газовой фазы otherwise химическое осаждение из пара) — a method to produce thin films and powders with the help of high-temperature decomposition and/or interaction reactions of gaseous precursors on the substrate (to produce films) or in the reactor volume (to produce powders).

Description

There are many variations of this method, differing in how the chemical reactions are initiated and what the process conditions are (pressure, vapour transportation to the substrate region, etc.). As a rule, the precursors used are compounds with a sufficiently high vapour pressure at low temperatures (100-400ºC; metal chlorides, organometallic complexes). The essential condition for fabricating high-quality films using this method is a high accuracy in gas velocity and precursor evaporation rate control.

Chemical vapour deposition is the method enabling the production of coatings with various structures (single-crystal, epitaxial, amorphous, polycrystalline) on the intricate surfaces, including highly curved shapes. The method of chemical vapour deposition in volume condensation is quite effective for fabricating weakly-aggregated nanopowders of various compounds.

Authors

  • Zhuravleva Natalya G.
  • Shlyakhtin Oleg A.

Sources

  1. Chemical vapor deposition // Wikipedia, the free Encyclopedia. — http://thesaurus.rusnano.com/wiki/article1937en.wikipedia.org/wiki/Chemical_vapor_deposition (reference date: 02.08.2010).
  2. Pierson H.O. Handbook of Chemical Vapor Deposition (CVD): Principles, Technology and Applications. — N. J., 1992. P. 235.
  3. Fundamentals of Chemical Vapor Deposition. —www.timedomaincvd.com/CVD_Fundamentals/Fundamentals_of_CVD.html (reference date: 02.08.2010).

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